Kondo-like behaviors in magnetic and thermal properties of single crystal Tm5Si2Ge2

摘要

We grew the single crystal of stoichiometric Tm5Si2.0Ge2.0 using a Bridgemanmethod and performed XRD, EDS, magnetization, ac and dc magneticsusceptibilities, specific heat, electrical resistivity and XPS experiments. Itcrystallizes in orthorhombic Sm5Ge4-type structure. The mean valence of Tm ionsin Tm5Si2.0Ge2.0 is almost trivalent. The 4f states is split by the crystallineelectric field. The ground state exhibits the long range antiferromagneticorder with the ferromagnetically coupled magnetic moments in the ac plane below8.01 K, while the exited states exhibit the reduction of magnetic moment andmagnetic entropy and -log T-behaviors observed in Kondo materials.